Data set for paper ''Reliability of Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors''

The reliability of In-Si-O (ISO) thin-film transistors (TFT) to bias voltage-stress and photo-stress is studied. The ISO TFTs were developed with a fully photolithographic process, with a maximum temperature of 200 C. The TFTs typically showed a mobility of 5.03 cm$^2$/Vs, a threshold voltage, $V_{th}$, of -0.16 V and a subthreshold swing of 312 mV/dec. The TFTs were biased for up to four hours at different temperatures and illumination. Threshold voltage shifts were observed and modeled. Threshold voltage shifted towards the negative, and off-current and subthreshold swings increased when the TFT was exposed to light with wavelengths less than 660 nm. Further investigation indicated that these phenomena were caused by persistent photo-conductivity. This shift could be compensated for by using a positive gate pulse to remove the light-induced shallow doubly-ionized donor states.