TCAD model of amorphous gallium oxide calibrated on experimental data for TFT FET and FeFET TCAD simulations

DATASET on TCAD model for amorphous gallium oxide calibrated on experimental data (for TCAD simulations of transistor employng amorphous gallium oxide as semiconductor)

- Experimental data: current-voltage characteristics plotted in in figures "IV_GaOxFET_al2o3.pdf" and "IV_GaOxFET_hfo2.pdf". The raw data can be found in the files "IV_GaOxFET.csv" and "IV_GaOxFET_hfo2.csv" in the columns “Vg_exp,Id_exp,Ig_exp” (respectively, gate voltage [V], drain current [A/um], gate voltage [A/um])- Simulated structures: 3-terminal bottom-gate FET shown in figures "struct_GaOx_FET_al2o3.pdf" and "struct_GaOx_FET_hfo2.pdf"- Simulator: Synopsys Sentaurus TCAD- TCAD model setup for amorphous gallium oxide: A bandgap of 5 eV, relative permittivity of 10 [1] and electron affinity of 4.07 eV [2] are used for the amorphous a–GaOx material. A constant n–type doping is considered. In addition, similarly to [3], a sub-gap density of states (DOS) is included for a–GaOx, consisting in exponential band tails decaying into the energy-gap from the conduction and valence band edges and Gaussian-distributed acceptor-like trap states. Calibrated parameters of acceptor-like traps are reported in "GaOx_bulk_traps_parameters.csv". Parameters used for band tails are reported in "GaOx_band_tail_parameters.csv".  A constant mobility model is used (mobility equal to 10 cm2 V-1 s-1). The tungsten source and drain contacts to a–GaOx are modeled as Schottky contacts (Schottky barrier height of 0.55 eV, electron tunneling mass=0.2m0, hole tunneling mass=0.6m0). Fixed charges at the interface between a–GaOx and HfO2 or Al2 O3 are also considered, as well as uniformly distributed acceptor-type traps in the HfO2 and Al2 O3 dielectric layers [4], [5]. Trap parameters for HfO2 are reported in "HfO2_traps.csv". Trap parameters for Al2O3 are reported in "Al2O3_traps.csv"- The simulated current versus applied voltage is plotted against experiments in figures "IV_GaOxFET_al2o3.pdf" and "IV_GaOxFET_hfo2.pdf". The corresponding raw simulated data are reported in the files "IV_GaOxFET.csv" and "IV_GaOxFET_hfo2.csv", where V_down_TCAD(V) and V_up_TCAD(V) are the simulated applied gate voltages (up and down voltage sweep) and Id_up_TCAD(A/um) and Id_down_TCAD(A/um) are the corresponding simulated drain currents.

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