TCAD simulation of leakage current through thin HfO2 layers and model parameters calibrated on experimental data
收藏Zenodo2026-06-04 更新2026-05-26 收录
下载链接：
https://zenodo.org/doi/10.5281/zenodo.17048396
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资源简介：
This dataset contains:
Simulated results of leakage current through thin HfO2 layers
Information about TCAD simulator and model used
Calibrated model parameters
More information can be found in the README.txt file.
This calibrated model has been presented and used in the publication:
10.1109/EDTM61175.2025.11040846 (open access version: https://air.uniud.it/handle/11390/1310884)
and in
C. Rossi, D. Lizzit, C. V. Dijck, T. L. Phan, C. Dubourdieu and D. Esseni, "Modelling of FEOL and BEOL Amorphous Gallium Oxide-based Ferroelectric FETs with a Metal Interlayer for Multilevel Operation in Short Channel Devices," in IEEE Journal of the Electron Devices Society, doi: 10.1109/JEDS.2026.3697979 (open access)
提供机构：
Zenodo创建时间：
2025-09-03
