Point defect structures in TMDs and h-BN
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Structures for transition metal dichalcogenides and h-BN with metallic dopants for nonvolatile resistive switching (NVRS) applications.
创建时间：
2020-09-10
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Structures for transition metal dichalcogenides and h-BN with metallic dopants for nonvolatile resistive switching (NVRS) applications.