JYFL-ACCLAB-RADEF_2024-03 Temperature dependence of heavy ion radiation sensitivity of 2nd gen SiC power MOSFETs

Name: JYFL-ACCLAB-RADEF_2024-03 Temperature dependence of heavy ion radiation sensitivity of 2nd gen SiC power MOSFETs
Creator: University of Jyväskylä
Published: 2024-10-30T16:47:55+08:00

DataCite Commons2024-10-31 更新2025-04-16 收录

SiC功率器件

辐射效应

数据链接：

https://etsin.fairdata.fi/dataset/a4d83f52-5c0d-4d3e-ba84-215dd3d258c6 数据链接链接失效反馈

官方服务：

资源简介：

This dataset contains data of Xe-126 irradiation tests of 2nd gen. SiC MOSFETs (CPM2-1200-0080B) at different temperatures. Temperature dependence of leakage current degradation was observed.

提供机构：

University of Jyväskylä

创建时间：

2024-10-30