High-performance P-doped SnO₂ microwires 8×8 ultraviolet imaging photodetector array

SnO2 is a wide bandgap n type semiconductor material with excellent physical, chemical and photovoltaic properties. Its bandgap (3.6 eV) is located in the ultraviolet region, and it is an excellent material for the fabrication of ultraviolet photodetectors. The millimeter-length P-doped SnO2 microwires were successfully fabricated for the first time using the chemical vapor deposition (CVD) method. The research has found that the microwire length can reach approximately6 mm and its diameter is about 2 μm. The photo-conductivity ultraviolet photodetector was fabricated based on a single P-doped SnO2 microwire. Under a 5 V bias and 308 nm UV light, the photocurrent of a single P-doped device was 2.44 μA, which was approximately 16 times higher than that of an undoped microwire (0.15 μA). It was found that phosphorus doping could significantly enhance the photocurrent of SnO2 microwire devices. Furthermore, the device has extremely high responsivity, EQE and D*, which are 174.1 A/W, 70269% and 4.8×1014 Jones, respectively. Furthermore, an 8×8 ultraviolet photoelectric detector array was fabricated based on a single P-doped SnO2 microwire. It was found that these 64 imaging pixels exhibited high uniformity. At 5 V bias, the maximum standard deviation of photocurrent is approximately 6%. In addition, the array is utilized as the imaging pixels of the UV imaging system and obtains clear “LNNU” image in the UV region, which indicates that the photodetector array based on P-doped SnO2 microwires possesses excellent light imaging capabilities. The research results of this paper provide a feasible method for constructing high-performance UV photodetector arrays and offer a reference for achieving high-quality ultraviolet imaging.