Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN

Name: Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN
Creator: Institute of High Pressure Physics
Published: 2024-07-15T18:33:45+08:00

RepOD Repository for Open Data2024-07-15 更新2026-07-23 收录

石墨烯肖特基势垒二极管

氮化镓半导体接触

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/XI2HKM 数据链接链接失效反馈

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资源简介：

Kruszewski , Piotr; Sai, Pavlo; Krajewska, Aleksandra; Sakowski, Konrad; Ivonyak, Yurii; Jakieła, Rafał; Plesiewicz, Jerzy; Prystawko, Paweł, 2024, "Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN", https://doi.org/10.18150/XI2HKM, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2024-07-15

Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN

资源简介：

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