Data and code underlying the research of: Reference in array logic

This focuses on maximizing the throughput and energy efficiency while performing multi-operand (N)OR and (N)AND operations. This paper proposes a referencing-in-array scheme with a differential voltage-based sensing technique that enables accurate two and multi-operand logic operations for RRAM-based CIM architecture. The scheme makes use of a 2T2R cell configuration to create a complementary bitcell structure that inherently acts also as a reference during the operation execution resulting in a high sensing margin. Moreover, the variation-sensitive multi-operand (N)AND operation is implemented using complementary-input (N)OR operation to further improve its accuracy. This dataset includes schematic netlist files, raw data on the Excel sheets for latency and power estimations/simulation results, and Matlab codes for generating the graphs and figures in the associated publication.本研究旨在于开展多操作数(N)或(N)与运算的过程中，最大化系统吞吐量与能源效率。本文提出一种基于差分电压传感技术的阵列内参考方案，可针对基于阻变随机存取存储器(Resistive Random Access Memory, RRAM)的存算一体(Compute-in-Memory, CIM)架构，实现精准的双操作数及多操作数逻辑运算。该方案采用2T2R单元配置构建互补位单元结构，其在运算执行过程中可天然充当参考源，进而获得较高的传感裕度。此外，针对对工艺变化敏感的多操作数(N)与运算，本方案通过互补输入(N)或运算实现，进一步提升了运算精度。本数据集包含原理图网表文件、用于延迟与功耗评估及仿真结果的Excel原始数据表，以及用于生成相关发表论文中图表的Matlab代码。