These figures describe the simulation results of a Schottky diode modeled in COMSOL Multiphysics under varying temperatures, different doping concentrations, and various Schottky barrier heights.
The files in this repository correspond to the results shown in the paper, "Modeling Temperature dependent Avalanche Characteristics of InP" published in the IEEE Journal of Lightwave Technology. T
This is the repository containing the datasets relative to the publication: A. Ruggieri, L. Tondelli, and L. Selmi, “Assessment of dual oxide options for LDMOS transistors in FinFET technology,” INFOS
There is currently a renewed interest in hydrogenated amorphous silicon (a-Si:H) for use in particle detection applications. Whilst this material has been comprehensively investigated from a numerical
This dataset is in support of my research paper 'Statistical Variability Study of RDF and LER on Nanosheet FETs at Sub 3nm Node'. In this study, we studied the influence of RDF and LER on NSFETs throu
