Detector test for ChipIR

B2FIND2026-04-25 收录

中子辐照测试

半导体探测器

数据链接：

https://b2find.eudat.eu/dataset/2eb8fc3f-e0f0-5f63-b892-7e264db31de1 数据链接链接失效反馈

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The range of application of high band-gap solid state detectors is expanding in those environments where the high neutron flux is an issue, such as in the high-flux spallation...

13μm cutoff InAs/GaSb Type-II superlattice nBn detectors with a high quantum efficiency grown by MOCVD

半导体探测器

材料生长

In this work we report the growth and fabrication optimisation of a long wavelength InAs/GaSb Type-II superlattice (T2SL) nBn detector grown by metal-organic chemical vapor deposition (MOCVD). A GaAs

DataCite Commons2025-01-09 更新280

高性能CdZnTe像素探测器模拟仿真设计数据集

半导体探测器

仿真

该数据集主要面向高性能半导体伽马射线探测器的物理设计与性能预测需求建设。数据基于GEANT4和COMSOL多物理场耦合仿真软件产生，通过西北工业大学及北京超级云计算中心的高性能计算平台，系统模拟了不同像素尺寸、电极结构及器件厚度下探测器内部的电场分布、载流子输运及伽马射线能量沉积过程。数据集记录了关键物理参数的扫描结果、权重势场数据及宏观能谱响应（如能量分辨率）的模拟值，是揭示探测器“结构-电场-

国家基础学科公共科学数据中心80

Hole diffusion length and mobility of a long wavelength infrared InAs/InAsSb type-II superlattice nBn design

半导体探测器

载流子特性

We report results from an 8.9 m cutoff InAs/InAsSb type-II strained-layer superlattice (T2SLS) nBn detector. The measured minority carrier (hole) lifetime is  =1.2 s at 80K. The detector quantum ef

DataCite Commons2024-10-28 更新40

Data displaying the characterisation of silicon detectors for positron emission tomography

半导体探测器

辐射检测

Includes data on the voltage characteristics of current and the voltage capacitors as well as data on gamma ray spectroscopy. Also included are ion beam charge collection and radiation damage studies.

Research Data Australia100

CZT Semiconductor Detector Market

半导体探测器

市场分析

The report on CZT Semiconductor Detector covers a summarized study of several factors supporting market growth, such as market size, market type, major regions, and end-user applications. The report e

IMR REPORTS60

Detector test for ChipIR

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