Scattered light pattern measurements on intact and defect InGaN-samples

The dataset consists of a total of 12 scattered light intensity measurements of InGaN nanowire samples. Each file contains the data from one measurement run. Six of the measurement runs were taken on intact samples ('nd'), whilst the remaining six were carried out on samples exhibiting surface defects in the form of low wire densities and short wire lengths ('d'). The measurements were carried out using the setup described in the citing publication and covered a section of the scattered light sphere comprising 89 x 27 measurement points with a step size of 1° in elevation and azimuth direction. The intensities are captured in auxiliary units, since only the intensity relation between the measurement positions is of interest. The experimental data about the measurement procedure, the laser, the detector etc. can be found in the citing publication.本数据集共包含12组氮化铟镓（InGaN）纳米线样品的散射光强度测量数据。每个文件对应单次测量流程的原始数据。其中6组测量流程针对完整样品（标记为'nd'），剩余6组则针对存在表面缺陷的样品——这类缺陷表现为纳米线密度较低且纳米线长度较短（标记为'd'）。 本次测量采用引用文献中所述的实验装置完成，测量覆盖了散射光球面的一个区域，包含89×27个测量点，极角与方位角方向的步长均为1°。强度以任意单位记录，因本研究仅关注各测量位置间的强度相对关系。有关测量流程、激光器、探测器等的实验细节，均可查阅引用文献获取。