绝缘体上铌酸锂材料的三种不同的干法刻蚀工艺相关数据

采用三种不同的干式蚀刻方法在绝缘子材料平台上制备了纳米光子器件。系统地研究了不同的干式蚀刻工艺及其优缺点和适用场景。使用优化的低损耗蚀刻配方，展示了粗糙度为0.46 nm (Rq)的超光滑蚀刻表面，提取传播损耗为1.42 dB/cm的低损耗脊波导，以及光学质量因子高达1.4×105的微环谐振器。该低损耗蚀刻技术为无源光学元件与量子点、片上宽带电光调制器和晶圆级铌酸锂集成光子电路的单片集成奠定了基础。Nanophotonic devices were fabricated on an insulator material platform using three distinct dry etching methods. A systematic investigation was conducted on the different dry etching processes, along with their respective advantages, disadvantages, and application scenarios. Using the optimized low-loss etching recipe, we demonstrated an ultra-smooth etched surface with a roughness of 0.46 nm (Rq), a low-loss ridge waveguide with an extracted propagation loss of 1.42 dB/cm, and a microring resonator with an optical quality factor as high as 1.4×10^5. This low-loss etching technique lays a foundation for the monolithic integration of passive optical components with quantum dots, on-chip broadband electro-optic modulators, and wafer-scale lithium niobate integrated photonic circuits.

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该数据集涉及绝缘体上铌酸锂材料的三种干法刻蚀工艺，系统研究了其优缺点和适用场景。通过优化工艺，实现了超光滑蚀刻表面和低损耗脊波导，为集成光子电路的单片集成奠定了基础。