纠缠光子对产生效率及纠缠保真度数据集
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该实验测试数据在中山大学完成,部分数据由中国科学院半导体研究所协助完成。采集时间为2018年5月至2021年9月。使用Veeco Gen930分子束外延设备制备样品,对量子点单双激子进行HH、HV、DA、DD、RL和RR六种偏振方向的HBT测试,得到高保真度和高产生效率。(HBT装置:包含了两个Si雪崩单光子计数检测模块(SPCM-AQR-15; time resolution, 350 ps; dark count rate, 80 counts/s; dead time, 45 ns)和时间符合计数模块)。
This experimental test data was completed at Sun Yat-sen University, with partial data assisted by the Institute of Semiconductors, Chinese Academy of Sciences. The data collection period spanned from May 2018 to September 2021. Samples were prepared using a Veeco Gen930 molecular beam epitaxy system. HBT measurements were conducted on single and biexcitons of quantum dots under six polarization directions: HH, HV, DA, DD, RL and RR, achieving high fidelity and high generation efficiency. The HBT setup consists of two Si avalanche single-photon counting modules (SPCM-AQR-15; time resolution: 350 ps; dark count rate: 80 counts/s; dead time: 45 ns) and a time-correlated single-photon counting module.




