高温SOI CMOS工艺集成技术开发数据集

数据集通过中中央财政专项资金和自筹资金，以国家智能传感器领域重大需求为牵引，围绕传感器研发支撑平台这一技术方向，针对高温传感器配套专用集成电路（ASIC）制造的难题，探索250℃高温下SOI CMOS工艺集成技术开发。突破的关键技术：（1）高温传感器 ASIC 设计技术，优化电路温度系数；（2）高温 SOI CMOS 制造工艺技术；通过钻研高温下SOI CMOS工艺集成技术，开发出一套成熟的耐高温0.15μm SOI工艺，为器件生产及后续智能传感器研发生产提供工艺技术支撑。This dataset is funded by central government's special fiscal funds and self-raised funds, driven by major national demands in the field of intelligent sensors, and focuses on the technical direction of sensor R&D support platforms. It targets the technical challenges in manufacturing application-specific integrated circuits (ASICs) for high-temperature sensors, and explores the development of SOI CMOS process integration technology under 250℃ high-temperature environments. The key breakthrough technologies are as follows: (1) High-temperature sensor ASIC design technology, which optimizes the temperature coefficient of circuits; (2) High-temperature SOI CMOS manufacturing process technology. Through in-depth research on high-temperature SOI CMOS process integration technology, a mature 0.15μm high-temperature-resistant SOI process has been developed, providing technical and process support for device production and subsequent R&D and manufacturing of intelligent sensors.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于高温传感器专用集成电路（ASIC）制造难题，旨在开发250℃高温下的SOI CMOS工艺集成技术，突破了高温ASIC设计优化和SOI CMOS制造工艺两项关键技术。数据集包含12个文件，总数据量48.62MB，提供工艺开发的技术支撑，属于国家重点研发计划项目成果。