This dataset primarily focuses on calculating single-event rates for a selection of representative devices under major terrestrial neutron spectra. It includes the assessment of single-event rates in
GaN FETs can provide higher switching rates which can lead to smaller, lighter, faster and more responsive circuits; however, historically, GaN FETs have been considered too difficult to drive and man
TOTAL ionizing dose (TID) induced threshold voltage (Vt) shifts limit reliability in integrated circuits (ICs) used in spacecraft. Deposited electron hole pairs are subject to recombination. However,
This paper establishes Single Event Effect (SEE) experiments and Space Electrostatic Discharge (SESD) to distinguish the causes of induced functional failures of motor control circuits in space applic
