TSMC 22nm工艺宽电压时序签核测试数据

本数据集是基于TSMC 22nm工艺节点构建的宽电压（0.6VDD~1.2VDD）时序签核的实测数据，旨在为宽电压设计中的时序签核问题一共实测参考。数据集的核心内容涵盖了从近阈值到宽电压、以及工艺角偏差和不同温度条件下的AI处理器功能测试数据的实测样本。数据采集环节依托经过严格校准的高精度测量设备，并引入第三方全流程现场监督机制，保障了数据本身具备极高的置信度与精确度。作为连接静态分析与硅后实测的基准，该数据集支持宽电压下的时序和稳定性分析，能为高性能芯片设计、EDA工具优化及良率提升提供关键的实测参考。该数据集已作为重点研发计划项目成果的重要组成部分，进行规范化汇交与管理。This dataset comprises measured timing sign-off data developed for the TSMC 22nm process node, spanning a wide voltage range of 0.6VDD to 1.2VDD. It is intended to provide measured reference for timing sign-off issues in wide-voltage design scenarios. The core contents of this dataset include measured samples of AI processor functional test data under conditions ranging from near-threshold to wide voltage, as well as under various process corner variations and different temperature conditions. The data collection process relies on strictly calibrated high-precision measurement equipment, and adopts a third-party full-process on-site supervision mechanism, ensuring that the data boasts extremely high confidence and accuracy. As a benchmark bridging static timing analysis and post-silicon measurement, this dataset supports timing and stability analysis under wide voltage conditions, and can offer critical measured references for high-performance chip design, EDA tool optimization and yield improvement. This dataset has been standardizedly collected and managed as an important component of the achievements of a key R&D program.

搜集汇总

背景与挑战

背景概述

该数据集基于TSMC 22nm工艺节点，提供了宽电压（0.6VDD~1.2VDD）时序签核的实测数据，涵盖近阈值到宽电压、工艺角偏差及不同温度条件下的AI处理器功能测试样本。数据采集过程采用高精度测量设备并引入第三方监督，确保数据的高置信度与精确性，为宽电压设计中的时序签核、高性能芯片开发和EDA工具优化提供关键实测参考。