With the development of Moores’ law, through-silicon via (TSV) has emerged as a critical technology for the realization of three-dimensional(3-D) packaged integrated circuits. However, with the widesp
This proposal aims at further studying the effects of atmospheric neutrons on 3D NAND Flash memories with vertical architecture, by investigating the impact of the peripheral circuitry. Indeed, in com
Total ionizing dose (TID) has a significant effect on silicon on insulator (SOI) circuits, manifest primarily as a front gate threshold voltage (Vt) shift. This paper presents data on ring oscillator
To investigate the single event effects and hard damage that advanced process commercial high-performance Dynamic Random Access Memory (DRAM) may experience in space environments, single-particle flip
This summary describes the results of total ionizing dose (TID) experiments on fully depleted silicon on insulator (FDSOI) static random access memory (SRAM). The tests were conducted with C060 gamma
