To investigate the single event effects and hard damage that advanced process commercial high-performance Dynamic Random Access Memory (DRAM) may experience in space environments, single-particle flip
TOTAL ionizing dose (TID) induced threshold voltage (Vt) shifts limit reliability in integrated circuits (ICs) used in spacecraft. Deposited electron hole pairs are subject to recombination. However,
With the development of Moores’ law, through-silicon via (TSV) has emerged as a critical technology for the realization of three-dimensional(3-D) packaged integrated circuits. However, with the widesp
