Piezoelectric and thermal strain in AlGaN/GaN-based HEMTs in operation

Name: Piezoelectric and thermal strain in AlGaN/GaN-based HEMTs in operation
Creator: Fraunhofer IISB; TU Bergakademie Freiberg; Argonne National laboratory,X-ray Science Division,9700 S. Cass Ave.,Building 438/B008,60439 ILLINOIS,60439,ILLINOIS,USA; Leibniz Institute for Crystal Growth,Berlin -Adlershof,12489 BERLIN,GERMANY,12489 ,BERLIN,GERMANY; Argonne National Laboratory,X-Ray Science Division,9700 S.Cass Avenue,B109,60439 LEMONT,60439,LEMONT,USA
Published: 2027-01-01T00:00:00+08:00

ESRF Portal2027-01-01 更新2026-04-23 收录

半导体器件可靠性

宽禁带半导体器件

数据链接：

https://doi.esrf.fr/10.15151/ESRF-ES-1873392381 数据链接链接失效反馈

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资源简介：

We propose to acquire operando scanning X-ray diffraction microscopy (SXDM) maps on Al(Ga)N/GaN-based HEMT devices in operation mode. The study aims to probe the lattice distortion in the active layer of the device due to inhomogeneities in the electric field and temperature distribution. The results will help to bench-mark other techniques, such as micro-Raman scattering and device modelling.

提供机构：

Fraunhofer IISB; TU Bergakademie Freiberg; Argonne National laboratory,X-ray Science Division,9700 S. Cass Ave.,Building 438/B008,60439 ILLINOIS,60439,ILLINOIS,USA; Leibniz Institute for Crystal Growth,Berlin -Adlershof,12489 BERLIN,GERMANY,12489 ,BERLIN,GERMANY; Argonne National Laboratory,X-Ray Science Division,9700 S.Cass Avenue,B109,60439 LEMONT,60439,LEMONT,USA

创建时间：

2027-01-01