Enhancement of the linear and nonlinear planar Hall effect by altermagnets on the surface of topological insulators

We investigate the planar Hall effect (PHE) in topological insulators (TIs) in proximity to an altermagnet (AM). We find that, due to the interplay between altermagnetism and spin-momentum locking, in-plane magnetic fields can induce PHE in the TI surface states by modulating the anisotropy of the Fermi velocity, the characteristic vectors associated with spin-momentum locking, and the tilt of the Dirac cone. Both linear and nonlinear PHE can be significantly enhanced by the adjacent AM, particularly when the Néel vector lies within the TI surface. Notably, the planar Hall conductivities are tunable by the spin-momentum locking properties and change sign as the Néel vector rotates by 180 ° in the TI surface. Therefore, the PHE can serve as a powerful tool for detecting both the Néel vector and the spin-momentum locking characteristics., , # Data from: Enhancement of the linear and nonlinear planar Hall effect by altermagnets on the surface of topological insulators **Abstract** We investigate the planar Hall effect (PHE) in topological insulators (TIs) in proximity to an altermagnet (AM). We find that, due to the interplay between altermagnetism and spin-momentum locking, in-plane magnetic fields can induce PHE in the TI surface states by modulating the anisotropy of the Fermi velocity, the characteristic vectors associated with spin-momentum locking, and the tilt of the Dirac cone. Both linear and nonlinear PHE can be significantly enhanced by the adjacent AM, particularly when the Néel vector lies within the TI surface. Notably, the planar Hall conductivities are tunable by the spin-momentum locking properties and change sign as the Néel vector rotates by 180° in the TI surface. Therefore, the PHE can serve as a powerful tool for detecting both the Néel vector and the spin-momentum locking characteristics. **Variabl...,我们研究了邻近反交替磁体（altermagnet, AM）的拓扑绝缘体（topological insulators, TIs）中的平面霍尔效应（planar Hall effect, PHE）。研究发现，由于反交替磁性与自旋动量锁定（spin-momentum locking）之间的相互作用，面内磁场可通过调控费米速度（Fermi velocity）各向异性、与自旋动量锁定相关的特征矢量以及狄拉克锥（Dirac cone）的倾斜程度，在拓扑绝缘体表面态中诱导平面霍尔效应。邻近的反交替磁体可显著增强线性与非线性平面霍尔效应，尤其当奈尔矢量（Néel vector）位于拓扑绝缘体表面内时效果尤为突出。值得注意的是，平面霍尔电导率可通过自旋动量锁定特性进行调控，且当奈尔矢量在拓扑绝缘体表面内旋转180°时，其符号会发生翻转。因此，平面霍尔效应可作为一种强有力的探测手段，同时用于奈尔矢量与自旋动量锁定特性的检测。 , , # 数据来源：《拓扑绝缘体表面反交替磁体对线性与非线性平面霍尔效应的增强效应》 **摘要** 我们研究了邻近反交替磁体（altermagnet, AM）的拓扑绝缘体（TIs）中的平面霍尔效应（PHE）。研究发现，由于反交替磁性与自旋动量锁定之间的相互作用，面内磁场可通过调控费米速度各向异性、与自旋动量锁定相关的特征矢量以及狄拉克锥的倾斜程度，在拓扑绝缘体表面态中诱导平面霍尔效应。邻近的反交替磁体可显著增强线性与非线性平面霍尔效应，尤其当奈尔矢量位于拓扑绝缘体表面内时效果尤为突出。值得注意的是，平面霍尔电导率可通过自旋动量锁定特性进行调控，且当奈尔矢量在拓扑绝缘体表面内旋转180°时，其符号会发生翻转。因此，平面霍尔效应可作为一种强有力的探测手段，同时用于奈尔矢量与自旋动量锁定特性的检测。 **变量[……]**